onsemi Accelerates Advancements in Silicon Carbide with EliteSiC M3e MOSFETs

Monday, 29 July 2024, 14:16

onsemi has unveiled its latest advancements in silicon carbide technology with the introduction of the EliteSiC M3e MOSFETs, promising enhanced performance and efficiency. The new generation is designed to exceed current standards in power electronics. Additionally, the company has outlined ambitious plans for further generations of their silicon carbide technology through 2030, underscoring their commitment to innovation in this sector.
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onsemi Accelerates Advancements in Silicon Carbide with EliteSiC M3e MOSFETs

Introduction to EliteSiC M3e MOSFETs

SCOTTSDALE, Ariz. – onsemi has introduced its latest innovation in silicon carbide technology, the EliteSiC M3e MOSFETs.

Key Features

  • Enhanced Performance: The M3e MOSFETs deliver improved efficiency for power electronics.
  • Future Generations: onsemi plans to launch multiple additional generations of this technology through 2030.

Conclusion

With the introduction of the EliteSiC M3e MOSFETs, onsemi is setting the stage for significant advancements in silicon carbide technology, emphasizing its role as a leader in innovation.


This article was prepared using information from open sources in accordance with the principles of Ethical Policy. The editorial team is not responsible for absolute accuracy, as it relies on data from the sources referenced.


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